Mapping of threading dislocation pile-up in Si1-xGex virtual substrates with low angle grazing incidence X-ray topography
نویسندگان
چکیده
Microelectronics Res. Lab., RINCE, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland; 2 Electronics and Computer Science Department, University of Southampton, Highfield, Southampton, SO17 1BJ United Kingdom; Optoelectronics Laboratory, Helsinki University of Technology, 02015 TKK, Espoo, Finland; Engineering Materials Department, University of Southampton, Highfield, Southampton, SO17 1BJ United Kingdom.
منابع مشابه
An effective compliant substrate for low-dislocation relaxed Si1−xGex growth
An effective compliant substrate for Si1−xGex growth is presented. A silicon-on-insulator substrate was implanted with B and O forming 20 wt % borosilicate glass within the SiO2. The addition of the borosilicate glass to the buried oxide acted to reduce the viscosity at the growth temperature of Si1−xGex , promoting the in situ elastic deformation of the thin Si (∼ 20 nm) layer on the insulator...
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